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Electrical characterization of plasma-grown oxides on gallium arsenidePlasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.
Document ID
19850050484
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Hshieh, F. I.
(Perkin-Elmer Corp. Norwalk, CT; Rensselaer Polytechnic Institute, Troy, NY, United States)
Bhat, K. N.
(Perkin-Elmer Corp. Norwalk, CT, United States)
Ghandhi, S. K.
(Perkin-Elmer Corp. Norwalk, CT, United States)
Borrego, J. M.
(Rensselaer Polytechnic Institute, Troy, NY, United States)
Date Acquired
August 12, 2013
Publication Date
May 15, 1985
Publication Information
Publication: Journal of Applied Physics
Volume: 57
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
85A32635
Funding Number(s)
CONTRACT_GRANT: NAG3-175
Distribution Limits
Public
Copyright
Other

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