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Effect of recombination on the open-circuit voltage of a silicon solar cellA theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.
Document ID
19850050487
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Von Roos, O.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Landsberg, P. T.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena, CA; Southampton, University Southampton, United Kingdom)
Date Acquired
August 12, 2013
Publication Date
May 15, 1985
Publication Information
Publication: Journal of Applied Physics
Volume: 57
ISSN: 0021-8979
Subject Category
Energy Production And Conversion
Accession Number
85A32638
Distribution Limits
Public
Copyright
Other

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