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s-wave threshold in electron attachment - Observations and cross sections in CCl4 and SF6 at ultralow electron energiesThe threshold photoionization method was used to study low-energy electron attachment phenomena in and cross sections of CCl4 and SF6 compounds, which have applications in the design of gaseous dielectrics and diffuse discharge opening switches. Measurements were made at electron energies from below threshold to 140 meV at resolutions of 6 and 8 meV. A narrow resolution-limited structure was observed in electron attachment to CCl4 and SF6 at electron energies below 10 meV, which is attributed to the divergence of the attachment cross section in the limit epsilon, l approaches zero. The results are compared with experimental collisional-ionization results, electron-swarm unfolded cross sections, and earlier threshold photoionization data.
Document ID
19850051950
Document Type
Reprint (Version printed in journal)
Authors
Chutjian, A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Alajajian, S. H. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 12, 2013
Publication Date
May 1, 1985
Publication Information
Publication: Physical Review A - General Physics, 3rd Series
Volume: 31
ISSN: 0556-2791
Subject Category
ATOMIC AND MOLECULAR PHYSICS
Distribution Limits
Public
Copyright
Other