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GaAs CLEFT solar cells for space applicationsAlthough GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).
Document ID
19850053456
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Fan, J. C. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Mcclelland, R. W.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
King, B. D.
(MIT, Lincoln Laboratory, Lexington MA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Kissimmee, FL
Start Date: May 1, 1984
End Date: May 4, 1984
Sponsors: IEEE
Accession Number
85A35607
Distribution Limits
Public
Copyright
Other

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