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Effect of localized polycrystalline silicon properties on solar cell performanceSeveral forms of polycrystalline silicon, mostly from cast ingots, (including UCP, SILSO and HEM) were studied. On typical slices, localized properties were studied in two ways. Small area (about 2.5 sq mm) mesa diodes were formed, and localized photovoltaic properties were measured. Also a small area (about .015 sq mm) light spot was scanned across the cells; the light spot response was calibrated to measure local diffusion length directly. Using these methods, the effects of grain boundaries, or of intragrain imperfections were correlated with cell performance. Except for the fine grain portion of SILSO, grain boundaries played only a secondary role in determining cell performance. The major factor was intra-grain material quality and it varied with position in ingots and probably related to solidification procedure.
Document ID
19850053483
Document Type
Conference Paper
Authors
Leung, D. (Applied Solar Energy Corp. City of Industry, CA, United States)
Iles, P. A. (Applied Solar Energy Corp. City of Industry, CA, United States)
Hyland, S. (Applied Solar Energy Corp. City of Industry, CA, United States)
Kachare, A. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Subject Category
SOLID-STATE PHYSICS
Meeting Information
Photovoltaic Specialists Conference(Kissimmee, FL)
Funding Number(s)
CONTRACT_GRANT: JPL-955089
Distribution Limits
Public
Copyright
Other