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Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cellsBoron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.
Document ID
19850053547
Document Type
Conference Paper
Authors
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Mehta, S. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Subject Category
SOLID-STATE PHYSICS
Meeting Information
Photovoltaic Specialists Conference(Kissimmee, FL)
Distribution Limits
Public
Copyright
Other