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A new high-efficiency GaAs solar cell structure using a heterostructure back-surface fieldShallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.
Document ID
19850053567
Document Type
Conference Paper
Authors
Gale, R. P. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Fan, J. C. C. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Turner, G. W. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Chapman, R. L. (MIT, Lincoln Laboratory, Lexington MA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Subject Category
ENERGY PRODUCTION AND CONVERSION
Meeting Information
Photovoltaic Specialists Conference(Kissimmee, FL)
Distribution Limits
Public
Copyright
Other