A potential energy scaling Monte Carlo simulation of thin film nucleation and growth

The initial growth of thin Ge fims on the (100) surface of an Fe substrate is investigated theoretically by means of Monte Carlo simulations based on a potential-energy-scaling technique. The substrate is modeled as a 20 x 20-square array with periodic boundary conditions, as described by Heinbockel et al. (1983), and the movement of surface atoms under the influence of the substrate interaction potential and the lateral interaction of neighboring atoms is explored via continuous updating (on the time scale of single events) of the potential energy at each site in the array. Results for the clustering of nine dispersed atoms over 1.0 s at 600 K and for deposition at 5 x 10 to the -14th/sq cm s over 2.0 s at 500 K are presented graphically.