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Oxygen in GaAs - Direct and indirect effectsOxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.
Document ID
19850066348
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Skowronski, M.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Pawlowicz, L.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(MIT Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
September 1, 1984
Subject Category
Solid-State Physics
Accession Number
85A48499
Distribution Limits
Public
Copyright
Other

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