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Electron mobility in modulation-doped heterostructuresA model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.
Document ID
19850066363
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Walukiewicz, W.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Ruda, H. E.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(MIT Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
October 15, 1984
Publication Information
Publication: Physical Review B - Solid State, 3rd Series
Volume: 30
ISSN: 0556-2805
Subject Category
Solid-State Physics
Accession Number
85A48514
Distribution Limits
Public
Copyright
Other

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