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Single-Event Upsets Caused by High-Energy ProtonsHeavy secondary ions do not significantly alter device responses. Conclusion that external reaction products cause no significant alteration of single-event-upset response based on comparison of data obtained from both lidded and unlidded devices and for proton beams impinging at angles ranging from 0 degrees to 180 degrees with respect to chip face. Study also found single-event-upset cross section increases only modestly as proton energy increased to 590 MeV, characteristic of maximum energies expected in belts of trapped protons surrounding Earth and Jupiter.
Document ID
19860000027
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Price, W. E.
(Caltech)
Nichols, D. K.
(Caltech)
Smith, L. S.
(Caltech)
Soli, G. A.
(Caltech)
Date Acquired
August 12, 2013
Publication Date
June 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 10
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Systems
Report/Patent Number
NPO-16504
Accession Number
86B10027
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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