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Increasing the Deposition Rate of SiliconModified Siemens reactor enables chemical vapor deposition (CVD) of silicon to occur simultaneously on inner and outer surfaces of hollow cylinder, resulting in increase in mass of silicon deposited per unit time. Outer reactor for silicon deposition made from quartz or stainless steel. Hollow cylinder either single resistance-heated hollow cylinder about 5 to 10 cm or greater in diameter or 1-cm-diameter rods aligned in circular channels at top and bottom, initial circles being 5 to 10 cm in diameter or greater.
Document ID
19860000430
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Lutwack, R.
(Caltech)
Yamakawa, K. A.
(Caltech)
Date Acquired
August 12, 2013
Publication Date
September 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 10
Issue: 5
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
NPO-15911
Accession Number
86B10430
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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