NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Low-Resistivity Zinc Selenide for HeterojunctionsMagnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.
Document ID
19860000500
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Stirn, R. J.
(Caltech)
Date Acquired
August 12, 2013
Publication Date
November 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 10
Issue: 6
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-16475
Accession Number
86B10500
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available