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JMOSFET: A MOSFET parameter extractor with geometry-dependent termsThe parameters from metal-oxide-silicon field-effect transistors (MOSFETs) that are included on the Combined Release and Radiation Effects Satellite (CRRES) test chips need to be extracted to have a simple but comprehensive method that can be used in wafer acceptance, and to have a method that is sufficiently accurate that it can be used in integrated circuits. A set of MOSFET parameter extraction procedures that are directly linked to the MOSFET model equations and that facilitate the use of simple, direct curve-fitting techniques are developed. In addition, the major physical effects that affect MOSFET operation in the linear and saturation regions of operation for devices fabricated in 1.2 to 3.0 mm CMOS technology are included. The fitting procedures were designed to establish single values for such parameters as threshold voltage and transconductance and to provide for slope matching between the linear and saturation regions of the MOSFET output current-voltage curves. Four different sizes of transistors that cover a rectangular-shaped region of the channel length-width plane are analyzed.
Document ID
19860019789
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Buehler, M. G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Moore, B. T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 12, 2013
Publication Date
June 1, 1985
Publication Information
Publication: Product Assurance Technology for Custom LSI(VLSI Electronics
Subject Category
Electronics And Electrical Engineering
Accession Number
86N29261
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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