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Analysis of high-speed growth of silicon sheet in inclined-meniscus configurationThe study of high speed growth of silicon sheet in inclined-meniscus configurations is discussed. It was concluded that the maximum growth rates in vertical and inclined growth are set by thermal-capillary limits. Also, the melt/crystal interface was determined to be flat. And, vertical growth is qualitatively modelled by one dimensional heat transfer.
Document ID
19860019925
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Thomas, P. D. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Brown, R. A. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
June 1, 1985
Publication Information
Publication: JPL, Pasadena, Calif. Proceedings of the 25th Project Integration Meeting
Subject Category
Energy Production And Conversion
Accession Number
86N29397
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19860019875Collected WorksProceedings of the 25th Project Integration Meeting
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