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Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defectA dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.
Document ID
19860028094
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lin, D. G.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Chen, T.-P.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Skowronski, M.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(MIT Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
November 1, 1985
Publication Information
Publication: Applied Physics Letters
Volume: 47
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
86A12832
Distribution Limits
Public
Copyright
Other

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