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Theoretical values of various parameters in the Gummel-Poon model of a bipolar junction transistorVarious parameters in the Gummel-Poon model of a bipolar junction transistor are expressed in terms of the basic structure of a transistor. A consistent theoretical approach is used which facilitates an understanding of the foundations and limitations of the derived formulas. The results enable one to predict how changes in the geometry and composition of a transistor would affect performance.
Document ID
19860037614
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.336624
Authors
Benumof, R. (College of Staten Island NY, United States)
Zoutendyk, J. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 12, 2013
Publication Date
January 15, 1986
Publication Information
Publication: Journal of Applied Physics
Volume: 59
ISSN: 0021-8979
Subject Category
Electronics And Electrical Engineering
Accession Number
86A22352
Distribution Limits
Public
Copyright
Other

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