Development of design criteria and qualification tests for bypass diodes in photovoltaic applications

Design criteria have been developed for bypass diodes in p-n and Schottky barrier in photovoltaic applications. A test method for assessing conformity to the design criteria is described. Junction temperatures are defined in terms of expected worst-case field conditions, including ambient temperature and solar irradiance on the photovoltaic module. The rating criteria address the maximum allowable current and heat-sink characteristics of diodes mounted inside or outside the photovoltaic module. The method establishes worst-case module-to-diode thermal interfaces and may be adapted for laboratory or field-site experiments. A list of the design criteria is given.