Development of design criteria and qualification tests for bypass diodes in photovoltaic applicationsDesign criteria have been developed for bypass diodes in p-n and Schottky barrier in photovoltaic applications. A test method for assessing conformity to the design criteria is described. Junction temperatures are defined in terms of expected worst-case field conditions, including ambient temperature and solar irradiance on the photovoltaic module. The rating criteria address the maximum allowable current and heat-sink characteristics of diodes mounted inside or outside the photovoltaic module. The method establishes worst-case module-to-diode thermal interfaces and may be adapted for laboratory or field-site experiments. A list of the design criteria is given.
Document ID
19860038268
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Otth, D. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Sugimura, R. S. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Ross, R. G., Jr. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)