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Record 1 of 25382
Single-Event Upset (SEU) model verification and threshold determination using heavy ions in a bipolar static RAM
Author and Affiliation:
Zoutendyk, J. A.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Smith, L. S.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Soli, G. A.(California Institute of Technology, Jet Propulsion Laboratory, Pasadena, United States)
Thieberger, P.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Wegner, H. E.(Brookhaven National Laboratory, Upton, NY, United States)
Abstract: Single-Event Upset (SEU) response of a bipolar low-power Schottky-diode-clamped TTL static RAM has been observed using Br ions in the 100-240 MeV energy range and O ions in the 20-100 MeV range. These data complete the experimental verification of circuit-simulation SEU modeling for this device. The threshold for onset of SEU has been observed by the variation of energy, ion species and angle of incidence. The results obtained from the computer circuit-simulation modeling and experimental model verification demonstrate a viable methodology for modeling SEU in bipolar integrated circuits.
Publication Date: Dec 01, 1985
Document ID:
19860040798
(Acquired Nov 28, 1995)
Accession Number: 86A25536
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Journal Article
Publication Information: IEEE Transactions on Nuclear Science; p. 4164-416; (ISSN 0018-9499); NS-32
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Brookhaven National Lab.; Upton, NY, United States
Description: 6p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: ION IRRADIATION; RADIATION DAMAGE; RANDOM ACCESS MEMORY; SINGLE EVENT UPSETS; TTL INTEGRATED CIRCUITS; BIPOLARITY; COMPUTERIZED SIMULATION; HEAVY IONS; INCIDENT RADIATION; SCHOTTKY DIODES; THRESHOLDS
Imprint And Other Notes: (IEEE, DNA, Sandia National Laboratories, and NASA, 1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985) IEEE Transactions on Nuclear Science (ISSN 0018-9499), vol. NS-32, Dec. 1985, p. 4164-4169. NASA-supported research.
Miscellaneous Notes: NASA-supported research
Availability Source: Other Sources
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