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Single-Event Upset (SEU) model verification and threshold determination using heavy ions in a bipolar static RAMSingle-Event Upset (SEU) response of a bipolar low-power Schottky-diode-clamped TTL static RAM has been observed using Br ions in the 100-240 MeV energy range and O ions in the 20-100 MeV range. These data complete the experimental verification of circuit-simulation SEU modeling for this device. The threshold for onset of SEU has been observed by the variation of energy, ion species and angle of incidence. The results obtained from the computer circuit-simulation modeling and experimental model verification demonstrate a viable methodology for modeling SEU in bipolar integrated circuits.
Document ID
19860040798
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Zoutendyk, J. A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Smith, L. S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Soli, G. A.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Thieberger, P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Wegner, H. E.
(Brookhaven National Laboratory Upton, NY, United States)
Date Acquired
August 12, 2013
Publication Date
December 1, 1985
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: NS-32
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
86A25536
Distribution Limits
Public
Copyright
Other

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