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Anisotropic etching of Al by a directed Cl2 fluxA new Al etching technique is described that uses an ion beam from a Kaufman ion source and a directed Cl2 flux. The ion beam is used primarily to remove the native oxide and to allow the Cl2 to spontaneously react with the Al film forming volatile Al2Cl6. By controlling both the flux equivalent pressure of Cl2 and the ion beam current, this etching technique makes possible the anisotropic etching of Al with etch rates from 100 nm/min to nearly 10 microns/min with a high degree of selectivity.
Document ID
19860043339
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Efremow, N. N.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Geis, M. W.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Mountain, R. W.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lincoln, G. A.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Randall, J. N.
(MIT, Lincoln Laboratory, Lexington MA, United States)
Date Acquired
August 12, 2013
Publication Date
February 1, 1986
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 4
ISSN: 0734-211X
Subject Category
Metallic Materials
Report/Patent Number
ESD-TR-86-016
AD-A167505
Accession Number
86A28077
Distribution Limits
Public
Copyright
Other

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