NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Nondestructive characterization of RBSOA of high-power bipolar transistorsReverse-bias safe operating area (RBSOA) of high-power Darlington transistors is characterized using a 120 A/1000 V nondestructive reverse-bias second breakdown tester designed and fabricated at Virginia Polytechnic Institute and State University. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.
Document ID
19860050980
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Jovanovic, M. M. (Virginia Polytechnic Inst. and State Univ. Blacksburg, VA, United States)
Lee, F. C. (Virginia Polytechnic Inst. and State Univ. Blacksburg, VA, United States)
Chen, D. Y. (Virginia Polytechnic Institute and State University Blacksburg, United States)
Date Acquired
August 12, 2013
Publication Date
March 1, 1986
Publication Information
Publication: IEEE Transactions on Aerospace and Electronic Systems
Volume: AES-22
ISSN: 0018-9251
Subject Category
Electronics And Electrical Engineering
Accession Number
86A35718
Funding Number(s)
CONTRACT_GRANT: JPL-956684
CONTRACT_GRANT: NAG3-99
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available