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Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurementsA technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.
Document ID
19860051339
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lewis, B. F.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Fernandez, R.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Madhukar, A.
(Southern California, University Los Angeles, CA, United States)
Date Acquired
August 12, 2013
Publication Date
April 1, 1986
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 4
ISSN: 0734-211X
Subject Category
Solid-State Physics
Accession Number
86A36077
Funding Number(s)
CONTRACT_GRANT: F49620-83-C-0074
CONTRACT_GRANT: N00014-83-K-0050
Distribution Limits
Public
Copyright
Other

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