Application of an InGaAsP diode laser to probe photodissociation dynamics - I(asterisk) quantum yields from n- and i-C3F7I and CH3I by laser gain vs absorption spectroscopy

Initial measurements on I-asterisk yields of alkyl iodides at 266 nm are reported using gain vs. absorption spectroscopy with an InGaAsP diode probe laser. The results are 102 percent + or - 4 percent, 102 percent + or - 7 percent, and 73 percent + or - 4 percent for n-C3F7I, i-C3F7I, and CH3I respectively. Future prospects for the development of diode laser systems and for their use in dynamical studies are discussed.