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low-loss optical waveguides made with molecular beam epitaxial in(0.012)ga(0.988)as and in(0.2)ga(0.8)as-gaas superlatticesLow-loss optical guiding in In-doped GaAs is demonstrated for the first time. Ridge waveguides are made with single In(0.012)Ga(0.988)As ternary layers and In(0.2)Ga(0.8)As-GaAs superlattices. Attenuation constants of about 1.3 dB/cm are measured and the principal loss mechanism is identified to be scattering at the ridge walls. It is expected that improved fabrication techniques will lead to guides with attenuation less than or equal to 0.5 dB/cm.
Document ID
19860056922
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Das, U.
(Michigan Univ. Ann Arbor, MI, United States)
Bhattacharya, P. K.
(Michigan Univ. Ann Arbor, MI, United States)
Dhar, S.
(Michigan, University Ann Arbor, United States)
Date Acquired
August 12, 2013
Publication Date
June 2, 1986
Publication Information
Publication: Applied Physics Letters
Volume: 48
ISSN: 0003-6951
Subject Category
OPTICS
Funding Number(s)
CONTRACT_GRANT: NAG1-555
Distribution Limits
Public
Copyright
Other