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Record Details

Record 65 of 36573
Exact solution of three-dimensional transport problems using one-dimensional models. [in semiconductor devices]
External Online Source: doi:10.1063/1.336717
Author and Affiliation:
Misiakos, K.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Lindholm, F. A.(Florida, University, Gainesville, United States)
Abstract: Several parameters of certain three-dimensional semiconductor devices including diodes, transistors, and solar cells can be determined without solving the actual boundary-value problem. The recombination current, transit time, and open-circuit voltage of planar diodes are emphasized here. The resulting analytical expressions enable determination of the surface recombination velocity of shallow planar diodes. The method involves introducing corresponding one-dimensional models having the same values of these parameters.
Publication Date: Jun 15, 1986
Document ID:
19860057373
(Acquired Nov 28, 1995)
Accession Number: 86A42111
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Journal Article
Publication Information: Journal of Applied Physics (ISSN 0021-8979); 59; 4091-409
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: 6p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: ELECTRIC CURRENT; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR DEVICES; TRANSIT TIME; TRANSPORT PROPERTIES; CARRIER LIFETIME; MINORITY CARRIERS; PLANAR STRUCTURES; SEMICONDUCTOR DIODES; TRANSISTORS
Imprint And Other Notes: Journal of Applied Physics (ISSN 0021-8979), vol. 59, June 15, 1986, p. 4091-4096. Research supported by the Semiconductor Research Corp. and NASA.
Miscellaneous Notes: Research supported by the Semiconductor Research Corp. and NASA
Availability Source: Other Sources
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