Accelerated stress testing of amorphous silicon solar cellsA technique for performing accelerated stress tests of large-area thin a-Si solar cells is presented. A computer-controlled short-interval test system employing low-cost ac-powered ELH illumination and a simulated a-Si reference cell (seven individually bandpass-filtered zero-biased crystalline PIN photodiodes) calibrated to the response of an a-Si control cell is described and illustrated with flow diagrams, drawings, and graphs. Preliminary results indicate that while most tests of a program developed for c-Si cells are applicable to a-Si cells, spurious degradation may appear in a-Si cells tested at temperatures above 130 C.
Stoddard, W. G. (Clemson Univ. SC, United States)
Davis, C. W. (Clemson Univ. SC, United States)
Lathrop, J. W. (Clemson University SC, United States)