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Accelerated stress testing of amorphous silicon solar cellsA technique for performing accelerated stress tests of large-area thin a-Si solar cells is presented. A computer-controlled short-interval test system employing low-cost ac-powered ELH illumination and a simulated a-Si reference cell (seven individually bandpass-filtered zero-biased crystalline PIN photodiodes) calibrated to the response of an a-Si control cell is described and illustrated with flow diagrams, drawings, and graphs. Preliminary results indicate that while most tests of a program developed for c-Si cells are applicable to a-Si cells, spurious degradation may appear in a-Si cells tested at temperatures above 130 C.
Document ID
19860059102
Document Type
Conference Paper
Authors
Stoddard, W. G. (Clemson Univ. SC, United States)
Davis, C. W. (Clemson Univ. SC, United States)
Lathrop, J. W. (Clemson University SC, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1985
Subject Category
ENERGY PRODUCTION AND CONVERSION
Distribution Limits
Public
Copyright
Other