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Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II - Processing strategiesThe pseudosteady-state heat transfer model developed in a previous paper is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.
Document ID
19860061299
Document Type
Reprint (Version printed in journal)
Authors
Derby, J. J. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Brown, R. A. (MIT Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
May 1, 1986
Publication Information
Publication: Journal of Crystal Growth
Volume: 75
ISSN: 0022-0248
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other