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General theory of the transverse dielectric constant of III-V semiconducting compoundsA general model of the transverse dielectric constant of III-V compounds is developed using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In this method the Brillouin zone is partitioned into three regions by expanding the energy bands and matrix elements about the F, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, it is possible to get good insight into the dependence of the dielectric constant on the shape of the band structure.
Document ID
19860065122
Document Type
Reprint (Version printed in journal)
Authors
Kahen, K. B. (Illinois Univ. Urbana, IL, United States)
Leburton, J. P. (Illinois, University Urbana, United States)
Date Acquired
August 12, 2013
Publication Date
October 15, 1985
Publication Information
Publication: Physical Review B, 3rd Series
Volume: 32
ISSN: 0163-1829
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other