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MOSFET's for Cryogenic AmplifiersStudy seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.
Document ID
19870000110
Document Type
Other - NASA Tech Brief
Authors
Dehaye, R. (Tennessee Technological University)
Ventrice, C. A.
Date Acquired
August 13, 2013
Publication Date
March 1, 1987
Publication Information
Publication: NASA Tech Briefs
Volume: 11
Issue: 3
ISSN: 0145-319X
Subject Category
ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number
MFS-27111
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.