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Energy-Saving RAM-Power TapReverse-flow HEXFET(R) minimizes voltage drop and power dissipation. HEXFET(R) scheme reduces voltage drop by approximately 80 percent. Design for power tap for random-access memory (RAM) has potential application in digital systems.
Document ID
19870000376
Document Type
Other - NASA Tech Brief
Authors
Bruner, Alan Roy (Sperry Corp.)
Date Acquired
August 13, 2013
Publication Date
September 1, 1987
Publication Information
Publication: NASA Tech Briefs
Volume: 11
Issue: 8
ISSN: 0145-319X
Subject Category
ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number
LAR-13515
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.