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Numerical Simulation Of Silicon-Ribbon GrowthMathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.
Document ID
19870000526
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Woda, Ben K.
(Caltech)
Kuo, Chin-Po
(Caltech)
Utku, Senol
(Caltech)
Ray, Sujit Kumar
(Caltech)
Date Acquired
August 13, 2013
Publication Date
November 1, 1987
Publication Information
Publication: NASA Tech Briefs
Volume: 11
Issue: 10
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
NPO-16805
Accession Number
87B10526
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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