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Investigation of a GaAlAs Mach-Zehnder electro-optic modulatorA GaAs modulator operating at 0.78 to 0.88 micron wavelength has the potential to be integrated with a GaAs/GaAlAs laser diode for an integrated fiber-optic transmitter. A travelling-wave Mach-Zehnder modulator using the electro-optic effect of GaAs and operating at a wavelength of 0.82 microns has been investigated for the first time. A four layer Strip-loaded ridge optical waveguide has been analyzed using the effective index method and single mode waveguides have been designed. The electro-optic effect of GaAs has also been analyzed and a modulator using the geometry producing the maximum phase shift has been designed. A coplanar transmission line structure is used in an effort to tap the potentially higher bandwidth of travelling-wave electrodes. The modulator bandwidth has been calculated at 11.95 GHz with a required drive power of 2.335 Watts for full intensity modulation. Finally, some preliminary experiments were performed to characterize a fabrication process for the modulator.
Document ID
19870007520
Acquisition Source
Legacy CDMS
Document Type
Thesis/Dissertation
Authors
Materna, David M.
(Case Western Reserve Univ. Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1987
Subject Category
Communications And Radar
Report/Patent Number
NASA-CR-179573
NAS 1.26:179573
Accession Number
87N16953
Funding Number(s)
CONTRACT_GRANT: NCC3-54
PROJECT: RTOP 307-51-00
PROJECT: RTOP 506-44-21
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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