Recombination imaging of III-V solar cells

An imaging technique based on the radiative recombination of minority carriers in forward-biased solar cells has been developed for characterization of III-V solar cells. When used in mapping whole wafers, it has helped identify three independent loss mechanisms (broken grid lines, shorting defects, and direct-to-indirect bandgap transitions), all of which resulted in lower efficiencies. The imaging has also led to improvements in processing techniques to reduce the occurrence of broken gridlines as well as surface defects. The ability to visualize current mechanisms in solar cells is an intuitive tool which is powerful in its simplicity.