Radiation damage in proton irradiated indium phosphide solar cellsIndium phosphide solar cells exposed to 10 MeV proton irradiations were found to have significantly greater radiation resistance than either GaAs or Si. Performance predictions were obtained for two proton dominated orbits and one in which both protons and electrons were significant cell degradation factors. Array specific power was calculated using lightweight blanket technology, a SEP array structure, and projected cell efficiencies. Results indicate that arrays using fully developed InP cells should out-perform those using GaAs or Si in orbits where radiation is a significant cell degradation factor.
Document ID
19870019585
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E., Jr. (NASA Lewis Research Center Cleveland, OH, United States)
Yamaguchi, Masafumi (Nippon Telegraph and Telephone Public Corp. Tokai, Japan)
Date Acquired
September 5, 2013
Publication Date
November 1, 1986
Publication Information
Publication: ESA Proceedings of the Fifth European Symposium on Photovoltaic Generators in Space