Backside charging of the CCDUntil recently, the usefulness of the charge coupled device (CCD) as an imaging sensor was thought to be restricted to within rather narrow boundaries of the visible and near IR spectrum. However, since the discovery of backside charging the full potential of CCD performance is now realized. Indeed, the technique of backside charging not only allows the CCD to be used directly in the UV, EUV, and soft X-ray regimes, it has opened up new opportunities in optimizing charge collection processes as well. The technique of backside charging is discussed, and its properties, use, and potential in the future as it applies to the CCD are described.
Document ID
19870023708
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Janesick, J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Elliott, T. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Daud, T. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Mccarthy, J. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Blouke, M. (Tektronix, Inc. Beaverton, OR, United States)