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Studies of implanted iron in silicon by channeling and Rutherford backscatteringDifferent amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. It is found that the critical fluence of 100-keV iron implanted into silicon at room temperature is about 2.5 x 10 to the 14th Fe/sq cm, and that iron atoms are gettered by silicon oxidation. In this supersaturated region, iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (greater than or equal to 1100 C) but not at all during low-temperature annealing (less than or equal to 1000 C) in dry nitrogen ambient.
Document ID
19870023974
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Wang, P. W.
(State Univ. of New York Albany, NY, United States)
Cheng, H. S.
(State Univ. of New York Albany, NY, United States)
Gibson, W. M.
(State Univ. of New York Albany, NY, United States)
Corbett, J. W.
(New York, State University Albany, United States)
Date Acquired
August 13, 2013
Publication Date
August 15, 1986
Publication Information
Publication: Journal of Applied Physics
Volume: 60
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
87A11248
Distribution Limits
Public
Copyright
Other

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