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Stoichiometric disturbances in compound semiconductors due to ion implantationA method is developed to calculate the depth distribution of the local stoichiometric disturbance (SD) resulting from ion implantation in binary-compound substrates. The calculation includes first-order recoils considering projected range straggle of projectiles and recoils and lateral straggle of recoils. The method uses tabulated final-range statistics to infer the projectile range distributions at intermediate energies. This approach greatly simplifies the calculation with little compromise on accuracy as compared to existing procedures. As an illustration, the SD profile is calculated for implantation of boron, silicon, and aluminum in silicon carbide. The results for the latter case suggest that the SD may be responsible for otherwise unexplained distortions in the annealed aluminum profile. A comparison with calculations by other investigators using the Boltzmann transport equation shows good agreement.
Document ID
19870025018
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Avila, R. E.
(Case Western Reserve Univ. Cleveland, OH, United States)
Fung, C. D.
(Case Western Reserve University Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
September 1, 1986
Publication Information
Publication: Journal of Applied Physics
Volume: 60
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
87A12292
Funding Number(s)
CONTRACT_GRANT: NAG3-389
CONTRACT_GRANT: NAG3-490
Distribution Limits
Public
Copyright
Other

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