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low defect densities in molecular beam epitaxial gaas achieved by isoelectronic in dopingA study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).
Document ID
19870026621
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Bhattacharya, P. K.
(Michigan Univ. Ann Arbor, MI, United States)
Dhar, S.
(Michigan Univ. Ann Arbor, MI, United States)
Berger, P.
(Michigan Univ. Ann Arbor, MI, United States)
Juang, F.-Y.
(Michigan University Ann Arbor, United States)
Date Acquired
August 13, 2013
Publication Date
August 25, 1986
Publication Information
Publication: Applied Physics Letters
Volume: 49
ISSN: 0003-6951
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: NAG1-555
Distribution Limits
Public
Copyright
Other