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Six micrometer period wide-gap permalloy magnetic bubble devicesThis report describes the progress made toward the goal of developing a 1 Mbit bubble memory chip, based on a 6 micron period wide-gap permalloy technology. Characterization of the functions showed that the guard-rail, generator, swap, write-line, read-line and after several revisions, the replicator and the expander-detector performed acceptably in preliminary testing. Several investigations were initiated to solve the problem of low minor loop yield. A dual-spacing process, which allows the minor loop propagation elements to be more tightly coupled to the garnet film was developed. Several new propagate structures, intended to be more tolerant of small defects were also conceived.
Document ID
19870027898
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Chirovsky, L. M. F.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Bobeck, A. H.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Bonyhard, P. I.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Ekholm, D. T.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Hou, T. W.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Date Acquired
August 13, 2013
Publication Date
September 1, 1985
Publication Information
Publication: IEEE Transactions on Magnetics
Volume: MAG-21
ISSN: 0018-9464
Subject Category
Electronics And Electrical Engineering
Accession Number
87A15172
Funding Number(s)
CONTRACT_GRANT: F33615-81-C-1404
Distribution Limits
Public
Copyright
Other

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