Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatingsA development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.
Document ID
19870030783
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Vernon, S. M. (Spire Corp. Bedford, MA, United States)
Spitzer, M. B. (Spire Corp. Bedford, MA, United States)
Keavney, C. J. (Spire Corp. Bedford, MA, United States)
Haven, V. E. (Spire Corp. Bedford, MA, United States)
Sekula, P. A. (Spire Corp. Bedford, MA, United States)