NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Inverted thermal conversion - GaAs, a new alternative material for integrated circuitsA new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.
Document ID
19870031831
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Kang, C. H.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Skowronski, M.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Ko, K. Y.
(MIT Cambridge, MA, United States)
Date Acquired
August 13, 2013
Publication Date
October 6, 1986
Publication Information
Publication: Applied Physics Letters
Volume: 49
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
87A19105
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available