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A proposed GaAs-based superlattice solar cell structure with high efficiency and high radiation toleranceA solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.
Document ID
Document Type
Conference Paper
Goradia, Chandra
(Cleveland State Univ. OH, United States)
Clark, Ralph
(Cleveland State University OH, United States)
Brinker, David
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1985
Subject Category
Energy Production And Conversion
Accession Number
Distribution Limits

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