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Potential for use of InP solar cells in the space radiation environmentIndium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.
Document ID
19870032722
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K.
(NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1985
Subject Category
Electronics And Electrical Engineering
Accession Number
87A19996
Distribution Limits
Public
Copyright
Other

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