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Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor depositionA continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.
Document ID
19870033963
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Leon, R. P.
(NASA Lewis Research Center Cleveland, OH, United States)
Bailey, S. G.
(NASA Lewis Research Center Cleveland, OH, United States)
Mazaris, G. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Williams, W. D.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
October 13, 1986
Publication Information
Publication: Applied Physics Letters
Volume: 49
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
87A21237
Distribution Limits
Public
Copyright
Other

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