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Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 HzEquivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.
Document ID
Document Type
Reprint (Version printed in journal)
Liu, Shih-Ming J.
(Pennsylvania State Univ. University Park, PA, United States)
Das, Mukunda B.
(Pennsylvania State University University Park, United States)
Peng, Chin-Kun
(Pennsylvania State Univ. University Park, PA, United States)
Klem, John
(Pennsylvania State Univ. University Park, PA, United States)
Henderson, Timothy S.
(Illinois, University Urbana, United States)
Date Acquired
August 13, 2013
Publication Date
May 1, 1986
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-33
ISSN: 0018-9383
Subject Category
Electronics And Electrical Engineering
Accession Number
Funding Number(s)
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