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effects of excitation intensity on the photocurrent response of thin film silicon solar modulesPhotocurrent responses of amorphous thin film silicon solar modules at room temperature were studied at different excitation intensities using various monochromatic light sources. Photocurrent imaging techniques have been effectively used to locate rapidly, and non-destructively, failure and defect sites in the multilayer thin film device. Differences observed in the photocurrent response characteristics for two different cells in the same amorphous thin film silicon solar module suggest the possibility of the formation of dissimilarly active devices, even though the module is processed in the same fabrication process. Possible mechanisms are discussed.
Document ID
19870038733
Document Type
Reprint (Version printed in journal)
Authors
Kim, Q.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Shumka, A.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Trask, J.
(Management and Services Technology Corp. Falls Church, VA, United States)
Date Acquired
August 13, 2013
Publication Date
July 1, 1986
Publication Information
Publication: Solar Cells
Volume: 18
ISSN: 0379-6787
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Funding Number(s)
CONTRACT_GRANT: NAS7-918
Distribution Limits
Public
Copyright
Other