Thermal expansion of the hexagonal (6H) polytype of silicon carbide

X-ray diffraction is presently used to determine the thermal expansion of the hexagonal (6H) polytype of alpha-SiC over the 20-1000 C range. The principal (alpha-11 and alpha-33) axial coefficients of thermal expansion can be expressed by second-order polynomials; the former is noted to be larger than the latter over the entire temperature range, while the thermal expansion anisotropy increases continuously with increasing temperature. The thermal expansion and thermal expansion anisotropy obtained are compared with previously published results for the (6H) polytype, and discussed with respect to the structure.