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30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technologyAn all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.
Document ID
19870047251
Document Type
Conference Paper
Authors
Bauhahn, P. (Honeywell, Inc. Bloomington, MN, United States)
Contolatis, A. (Honeywell, Inc. Bloomington, MN, United States)
Sokolov, V. (Honeywell, Inc. Bloomington, MN, United States)
Chao, C. (Honeywell Physical Sciences Center Bloomington, MN, United States)
Date Acquired
August 13, 2013
Publication Date
June 1, 1986
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Funding Number(s)
CONTRACT_GRANT: NAS3-23356
Distribution Limits
Public
Copyright
Other