30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology

Bauhahn, P.; Contolatis, A.; Sokolov, V.; Chao, C.

An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

Document ID

19870047251

Document Type

Conference Paper

Authors

Bauhahn, P. (Honeywell, Inc. Bloomington, MN, United States)

Contolatis, A. (Honeywell, Inc. Bloomington, MN, United States)

Sokolov, V. (Honeywell, Inc. Bloomington, MN, United States)

Chao, C. (Honeywell Physical Sciences Center Bloomington, MN, United States)

Date Acquired

August 13, 2013

Publication Date

June 1, 1986

Subject Category

Funding Number(s)

Distribution Limits

Public

Other

NTRS

NTRS - NASA Technical Reports Server