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Anisotropic transport in modulation-doped quantum-well structuresAnisotropic electron transport has been observed in GaAs modulation-doped quantum wells grown by molecular-beam epitaxy on a thick (001) Al(0.3)Ga(0.7)As buffer grown at 620 C. Thicker quantum wells (150, 200, and 300 A) show progressively less anisotropy, which vanishes for a 300-A quantum well. The degree of anisotropy is also reduced or eliminated by suspending growth of the Al(0.3)Ga(0.7)As for a period of 300 s prior to growing the GaAs quantum well. Growing the Al(0.3)Ga(0.7)As buffer at higher temperatures (680 C) also reduces the degree of anisotropy. Higher two-dimensional electron gas sheet densities result in less anisotropy.The anisotropy is eliminated by replacing the thick Al(0.3)Ga(0.7)As buffer with a periodic multilayer structure comprising 15 A of GaAs and 200 A of Al(0.3)Ga(0.7)As. The degree of anisotropy is related to the thickness and growth parameters of the Al(0.3)Ga(0.7)As layer grown just prior to the growth of the GaAs.
Document ID
19870048091
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Radulescu, D. C.
(Cornell Univ. Ithaca, NY, United States)
Wicks, G. W.
(Cornell Univ. Ithaca, NY, United States)
Schaff, W. J.
(Cornell Univ. Ithaca, NY, United States)
Calawa, A.R.
(Cornell Univ. Ithaca, NY, United States)
Eastman, L. F.
(Cornell University Ithaca, NY, United States)
Date Acquired
August 13, 2013
Publication Date
March 15, 1987
Publication Information
Publication: Journal of Applied Physics
Volume: 61
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
87A35365
Distribution Limits
Public
Copyright
Other

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